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| a FEATURES 1.8 V to 5.5 V Single Supply 4 (Max) On Resistance Low On Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 8-Lead MSOP Package Fast Switching Times 20 ns t ON t OFF 10 ns Low Power Consumption (<0.1 TTL/CMOS Compatible CMOS Low Voltage 4 Dual SPST Switches ADG721/ADG722/ADG723 FUNCTIONAL BLOCK DIAGRAMS ADG721 S1 IN1 D1 D2 IN2 S2 IN2 S2 D1 D2 S1 IN1 ADG722 W) ADG723 S1 IN1 D1 D2 IN2 S2 APPLICATIONS USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement SWITCHES SHOWN FOR A LOGIC "0" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG721, ADG722, and ADG723 are monolithic CMOS SPST switches. These switches are designed on an advanced submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG721, ADG722, and ADG723 are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. The ADG721, ADG722, and ADG723 contain two independent single-pole/single-throw (SPST) switches. The ADG721 and ADG722 differ only in that both switches are normally open and normally closed, respectively. While in the ADG723, Switch 1 is normally open and Switch 2 is normally closed. Each switch of the ADG721, ADG722, and ADG723 conducts equally well in both directions when on. The ADG723 exhibits break-before-make switching action. 1. 1.8 V to 5.5 V Single-Supply Operation. The ADG721, ADG722, and ADG723 offer high performance, including low on resistance and fast switching times, and are fully specified and guaranteed with 3 V and 5 V supply rails. 2. Very Low RON (4 W max at 5 V, 10 W max at 3 V). At 1.8 V operation, RON is typically 40 W over the temperature range. 3. Low On Resistance Flatness. 4. -3 dB Bandwidth > 200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON /tOFF. 7. 8-Lead MSOP. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) 2004 Analog Devices, Inc. All rights reserved. ADG721/ADG722/ADG723-SPECIFICATIONS1 (VDD = 5 V 10%, GND = 0 V. All specifications -40 C to +85 C, unless otherwise noted.) B Version -40 C to +25 C +85 C 0 V to VDD 5 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (DRON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD (ADG723 Only) Charge Injection Off Isolation Unit V W max W typ W max W typ W max nA typ nA max nA typ nA max nA typ nA max V min V max mA typ mA max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ VIN = VINL or VINH Test Conditions/Comments 4 VS = 0 V to VDD, IS = -10 mA, Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VS = 0 V to VDD, IS = -10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V Test Circuit 2 VS = VD = 1 V, or VS = VD = 4.5 V Test Circuit 3 0.3 1.0 0.85 1.5 0.01 0.25 0.01 0.25 0.01 0.25 0.35 0.35 0.35 2.4 0.8 0.005 0.1 14 20 6 10 7 1 2 -60 -80 -77 -97 200 7 7 18 Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 W, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 W, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 W, CL = 35 pF, VS1 = VS2 = 3 V, Test Circuit 5 VS = 2 V; RS = 0 W, CL = 1 nF, Test Circuit 6 RL = 50 W, CL = 5 pF, f = 10 MHz RL = 50 W, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 W, CL = 5 pF, f = 10 MHz RL = 50 W, CL = 5 pF, f = 1 MHz, Test Circuit 8 RL = 50 W, CL = 5 pF, Test Circuit 9 0.001 1.0 mA typ mA max VDD = 5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature range: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. A SPECIFICATIONS (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (DRON) 1 ADG721/ADG722/ADG723 DD =3V 10%, GND = 0 V. All specifications -40 C to +85 C, unless otherwise noted.) B Version -40 C to +25 C +85 C 0 V to VDD 6.5 10 0.3 1.0 3.5 0.01 0.25 0.01 0.25 0.01 0.25 Unit V W typ W max W typ W max W typ nA typ nA max nA typ nA max nA typ nA max V min V max mA typ mA max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ Test Conditions/Comments VS = 0 V to VDD, IS = -10 mA Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VS = 0 V to VDD, IS = -10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V Test Circuit 2 VS = VD = 1 V, or 3 V Test Circuit 3 On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD (ADG723 Only) Charge Injection Off Isolation 0.35 0.35 0.35 2.0 0.4 0.005 0.1 VIN = VINL or VINH 16 24 7 11 7 1 2 -60 -80 -77 -97 200 7 7 18 Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 W, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 W, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 W, CL = 35 pF, VS1 = VS2 = 2 V, Test Circuit 5 VS = 1.5 V; RS = 0 W, CL = 1 nF, Test Circuit 6 RL = 50 W, CL = 5 pF, f = 10 MHz RL = 50 W, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 W, CL = 5 pF, f = 10 MHz RL = 50 W, CL = 5 pF, f = 1 MHz, Test Circuit 8 RL = 50 W, CL = 5 pF, Test Circuit 9 0.001 1.0 mA typ mA max VDD = 3.3 V Digital Inputs = 0 V or 3 V NOTES 1 Temperature range: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. A -3- ADG721/ADG722/ADG723 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25C unless otherwise noted) Table I. Truth Table (ADG721/ADG722) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150C MSOP Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. ADG721 In 0 1 ADG722 In 1 0 Switch Condition OFF ON Table II. Truth Table (ADG723) Logic 0 1 Switch 1 OFF ON Switch 2 ON OFF ORDERING GUIDE Model ADG721BRM ADG721BRM-REEL ADG721BRM-REEL7 ADG721BRMZ2 ADG721BRMZ-REEL2 ADG721BRMZ-REEL72 ADG722BRM ADG722BRM-REEL ADG722BRM-REEL7 ADG722BRMZ2 ADG722BRMZ-REEL2 ADG722BRMZ-REEL72 ADG723BRM ADG723BRM-REEL ADG723BRM-REEL7 Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C -40C to +85C Branding1 S6B S6B S6B S6B S6B S6B S7B S7B S7B S7B S7B S7B S8B S8B S8B Package Description MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP MSOP Package Option RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 RM-8 NOTES 1 Branding = Due to package size limitations, these three characters represent the part number. 2 Z = Pb-free part. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG721/ADG722/ADG723 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE -4- REV. A ADG721/ADG722/ADG723 PIN CONFIGURATION 8-Lead MSOP (RM-8) S1 1 D1 2 IN2 3 6 D2 TOP VIEW GND 4 (Not to Scale) 5 S2 ADG721/ ADG722/ ADG723 8 VDD 7 IN1 TERMINOLOGY Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RON max - RON min. Flatness is defined as the difference between the maximum and minimum value of on resitance as measured over the specified analog signal range. Source leakage current with the switch OFF. IS (OFF) Drain leakage current with the switch OFF. ID (OFF) Channel leakage current with the switch ON. ID, IS (ON) Analog voltage on terminals D, S. VD (VS) OFF Switch Source Capacitance. CS (OFF) OFF Switch Drain Capacitance. CD (OFF) ON Switch Capacitance. CD, CS (ON) Delay between applying the digital control input and the output switching on. tON Delay between applying the digital control input and the output switching off. tOFF tD OFF time or ON time measured between the 90% points of both switches, when switching from one address state to another (ADG723 Only). Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an OFF switch. Charge Injection A measure of the glitch impulse transferred during switching. VDD GND S D IN RON DRON RFLAT(ON) REV. A -5- ADG721/ADG722/ADG723 -Typical Performance Characteristics 6.0 5.5 5.0 4.5 4.0 3.5 RON - 1m VDD = +2.7V TA = +25 C 100 VDD = +4.5V 10 ISUPPLY - A VDD = +3.0V VDD = +5V 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V VDD = +5.0V 1 100n 10n 1n 10 100 1k 10k 100k FREQUENCY - Hz 1M 10M Figure 1. On Resistance as a Function of VD (VS) Single Supplies Figure 4. Supply Current vs. Input Switching Frequency 6.0 +85 C 5.0 OFF ISOLATION - dB -30 VDD = +3V -40 VDD = +3V, +5V -50 -60 -70 4.0 +25 C RON - 3.0 -40 C 2.0 -80 -90 -100 10k 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 100k 1M 10M FREQUENCY - Hz 100M Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures, VDD = 3 V Figure 5. Off Isolation vs. Frequency 6.0 5.5 5.0 4.5 +25 C +85 C CROSSTALK - dB -30 VDD = +5V -40 -50 -60 -70 -80 -90 -100 -110 10k VDD = +3V, +5V 4.0 3.5 RON - 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V -40 C 100k 10M 1M FREQUENCY - Hz 100M Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures, VDD = 5 V Figure 6. Crosstalk vs. Frequency -6- REV. A ADG721/ADG722/ADG723 -6 VDD = +5V -7 ON RESPONSE - dB -8 -9 -10 -11 -12 100 1k 10k 100k 1M FREQUENCY - Hz 10M 100M Figure 7. On Response vs. Frequency Test Circuits IDS V1 IS (OFF) ID (OFF) S D A VD VS S D ID (ON) A VD S D A VS VS RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VIN ADG721 VDD S VS D RL 300 GND VOUT VIN ADG722 IN CL 35pF VOUT 50% 90% 50% 90% 50% 50% tON tOFF Test Circuit 4. Switching Times VDD 0.1 F VIN D1 D2 RL2 300 GND VOUT2 CL2 35pF VOUT2 0V 90% 90% RL1 300 CL1 35pF VOUT1 VOUT1 0V VDD VS1 VS2 S1 S2 IN1, IN2 VIN 0V 50% 90% 50% 90% tD tD Test Circuit 5. Break-Before-Make Time Delay, tD (ADG723 Only) REV. A -7- ADG721/ADG722/ADG723 VDD SW ON VDD RS VS S D CL 1nF VOUT GND QINJ = CL VOUT VOUT VOUT VIN SW OFF IN Test Circuit 6. Charge Injection VDD 0.1 F 0.1 F VDD VDD S D RL 50 VS VIN IN GND VS VIN IN VDD VOUT S D RL 50 VOUT GND Test Circuit 7. Off Isolation Test Circuit 9. Bandwidth VDD 0.1 F VDD S D 50 VS VIN1 VIN2 S GND D RL 50 VOUT NC CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VS/VOUT Test Circuit 8. Channel-to-Channel Crosstalk -8- REV. A ADG721/ADG722/ADG723 APPLICATIONS INFORMATION The ADG721/ADG722/ADG723 belong to Analog Devices' new family of CMOS switches. This series of general-purpose switches has improved switching times, lower on resistance, higher bandwidths, low power consumption, and low leakage currents. ADG721/ADG722/ADG723 Supply Voltages Functionality of the ADG721/ADG722/ADG723 extends from 1.8 V to 5.5 V single supply, which makes it ideal for batterypowered instruments, where important design parameters are power efficiency and performance. It is important to note that the supply voltage affects the input signal range, the on resistance, and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. For VDD = 1.8 V, on resistance is typically 40 W over the temperature range. On Response vs. Frequency The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth, a switch must have a low input and output capacitance and low on resistance. See Figure 7. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load, when the switch is off as shown in Figure 9. CDS S VIN D VOUT CD CLOAD RLOAD Figure 8 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk, and system bandwidth. CDS S RON VIN CD CLOAD D VOUT RLOAD Figure 9. Off Isolation Is Affected by External Load Resistance and Capacitance Figure 8. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 8) is of the form (A)s shown below. E s(RON CDS ) + 1 A(s) = RT I I I s(RON CT RT ) + 1 where: CT = CLOAD + CD + CDS RT = RLOAD/(RLOAD + RON) The larger the value of CDS, the larger the values of feedthrough that are produced. The typical performance characteristic graph of Figure 5 illustrates the drop in off isolation as a function of frequency. From dc to roughly 1 MHz, the switch shows better than -80 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than -60 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest CDS as possible. The values of load resistance and capacitance also affect off isolation, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. E s(RLOAD CDS ) A(s) = I I s(RLOAD ) (CLOAD + CD + CDS ) + 1 I REV. A -9- ADG721/ADG722/ADG723 OUTLINE DIMENSIONS 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters 3.00 BSC 8 5 3.00 BSC 1 4 4.90 BSC PIN 1 0.65 BSC 0.15 0.00 0.38 0.22 COPLANARITY 0.10 1.10 MAX 8 0 0.80 0.60 0.40 0.23 0.08 SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-187AA -10- REV. A ADG721/ADG722/ADG723 Revision History Location 3/04--Data Sheet changed from REV. 0 to REV. A. Page Additions to APPLICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 REV. A -11- -12- C00045-0-3/04(A) This datasheet has been download from: www..com Datasheets for electronics components. |
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